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Semiconductor Device Processing & Measuring Lab
National Tsing Hua University, Department of Engineering and System Science
Journal Papers
Improved Electrical Characteristics of Ge pMOSFETs with ZrO2/HfO2 Stack Gate Dielectric
IEEE Electron Device Letters
Chen-Chien Li, Kuei-Shu Chang-Liao, Wei-Fong Chi, Mong-Chi Li, Ting-Chun Chen, Tzu-Hsiang Su, Yu-Wei Chang, Chia-Chi Tsai, Li-Jung Liu, Chung-Hao Fu, and Chun-Chang Lu
Conference Papers
Excellent Electrical Characteristics in Ge p-MOSFETs with H2 and NH3 Plasma Treated Interfacial Layers
2016-05
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Operation Characteristics of Poly-Si Nanowire Charge-Trapping Flash Memory Devices with SiGe
and Ge Buried Channels
2016-05
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High Performance Ge pMOSFETs with Minimized Ge+1 and Ge+2 in GeOx Interfacial Layer
IEEE SISC 2016 in San Diego, CA
S. H. Yi, K. S. Chang-Liao, T. Y. Wu, C. W. Hsu and J. Huang.
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