High-k Dielectric and Interface Engineering for High Performance Si/Ge MOS and FinFETs

IEEE EDS France Chapter Distinguished Lecture 2019

Kuei-Shu Chang-Liao

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Improved Electrical Characteristics of SOI FinFET with HfO2/ZrO2/HfO2 Gate Stack

EUROSOI-ULIS 2019

Yan-Lin Li, Kuei- Shu Chang-Liao, Dun-Bao Ruan, Shang-Hua Hsu, Bo-Xun Lu, Yu-Ting Kuo, Ying-Zhuang Chien, Kuan-Yu Lai, and Yao-Jen Lee

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Gate Stack Engineering for Ge MOS and FinFETs

IEEE ED Indian Institute of Technology - Roorkee Student Branch Chapter 2019

Kuei-Shu Chang-Liao

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High Performance Si/Ge MOS and FinFETs by Engineering Gate Stack

IEEE Singapore RS/EPS/EDS Chapter Distinguished Lectures 2019

Kuei-Shu Chang-Liao

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Enhanced Electrical and Reliability Characteristics of Ge pMOSFETs by Fluorine Followed with Oxygen and Nitrogen Plasma Treatment

21th Conference of Insulating Films on Semiconductors 2019

Guan-Ting Liu, Kuei-Shu Chang-Liao, Dun-Bao Ruan, Ji-Syuan Li, Shih-Han Yi, Zi-Qin Hong, Po-Chen Chiu, Yan-Lin Li

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Effects of Nitrogen Content in Interfacial Layer on Ge nMOSFET

21th Conference of Insulating Films on Semiconductors 2019

Po-Chen Chiu, Kuei-Shu Chang-Liao, Dun-Bao Ruan, Shih-Han Yi, Zi-Qin Hong, Guan-Ting Liu, Yan-Lin Li

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Radiation Effects and Reliability Characteristics of Ge pMOSFETs

21th Conference of Insulating Films on Semiconductors

Zi-Qin Hong, Kuei-Shu Chang-Liao, Dun-Bao Ruan, Shih-Han Yi, Po-Chen Chiu, Guan-Ting Liu, and Yan-Lin Li

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High Performance Ge pMOSFET with Engineering Interfacial Layer and Microwave Annealing

IEEE 9th International Nanoelectronics Conferences (INEC) 2019

Kuei-Shu Chang-Liao

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Effects of Plasma Nitrided Trilayer High-k Gate Dielectric on Electrical Characteristics of FinFET

International Conference on Solid State Devices and Materials 2019

Kuan-Yu Lai, Kuei- Shu Chang-Liao, Yan-Lin Li, Dun-Bao Ruan, Shang-Hua Hsu, Ying-Zhuang Chien, and Bo-Xun Lu

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Impact of Low Temperature Formed GeOx/Al2O3 Tunneling Layer on Reliability of Junctionless Poly-Ge Charge-Trapping Flash Memory Device

International Conference on Solid State Devices and Materials 2019

Te-Yu Chiang, Kuei-Shu Chang-Liao, Hsin-Kai Fang, Po-Yao Lin, Wen-Hsien Huang, Chang-Hong Shen and Jia-Min Shieh

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Enhanced Electrical Characteristics of FinFETs with Strained SiGe Super-Lattice Channel

International Conference on Solid State Devices and Materials 2019
Bo-Xun Lu, Kuei- Shu Chang-Liao, Yan-Lin Li, Dun-Bao Ruan, Shang-Hua Hsu, Ying-Zhuang Chien, Kuan-Yu Lai

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High Performance 3D Flash Memory Devices with Dielectric Engineering

IEEE Electron Devices Society Chengdu Chapter Distinguished Lecturer 2019

Kuei-Shu Chang-Liao

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Effects of ZrON and CF4 Plasma Treatment in Gate Stack on Electrical Characteristics of FinFETs

2019 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology

Ying-Zhuang Chien, Kuei- Shu Chang-Liao, Yan-Lin Li, Dun-Bao Ruan, Shang-Hua Hsu, Kuan-Yu Lai, and Bo-Xun Lu

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Improved Erasing Speed of Poly-Si Gate-All-Around Junctionless Charge-Trapping Flash Memory Devices with ZrO2 in Stacked Trapping Layer

2019 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology

Ping-Shun Ding, Kuei-Shu Chang-Liao, Hsin-Kai Fang, Chia-Hsin Cheng, Wen-Hsien Huang, Chang-Hong Shen and Jia-Min Shieh

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Notable Difference between Rapid-Thermal and Microwave Annealings on Ge pMOSFETs

2019 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology

Yu-Ting Kuo, Kuei-Shu Chang-Liao, Ying-Zhuang Chien, Ping-Shun Ding, Shi-Han Yi

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Gate Dielectric Quality Enhancement for Ge pMOSFET by In-situ Low Temperature Treatment in Atomic Layer Deposition Process

2019 International Thin Film Conference

Dun-Bao Ruan, Kuei-Shu Chang-Liao*, Ji-Syuan Li, Shih-Han Yi

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Engineering HfN Interface Layer in Gate Stack toward High Performance Ge nFETs 

50th IEEE Semiconductor Interface Specialist Conference (SISC) 2019

Chih-Wei Liu, Dun-Bao Ruan, Kuei-Shu Chang-Liao, Shih-Han Yi, Hsin-I Yeh, Wen-Yen Hsu and Y.J. Lee

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