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Semiconductor Device Processing & Measuring Lab
National Tsing Hua University, Department of Engineering and System Science
Journal Papers
High Performance Ge pMOSFETs With HfO2/Hf-Cap/GeOx Gate Stack and Suitable Post Metal Annealing Treatments
IEEE Electron Device Letters, vol. 38, no. 5, pp. 544-547, May 2017.
S. H. Yi, K. S. Chang-Liao, T. Y. Wu, C. W. Hsu and J. Huang.
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Conference Papers
High Performance Ge pMOSFETs with Simultaneous Mobility~ 412 cm2/V-s, EOT ~0.5 nm, ION/IOFF~105, Gate Leakage~10-4 A/cm2 by Modulating Interfacial Layer using Oxygen Deficient HfOx
Silicon Nanoelectronics Workshop 2017
S. H. Yi, K. S. Chang-Liao, T. Y. Wu, C. W. Hsu and J. Huang.
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