Semiconductor Device Processing & Measuring Lab
National Tsing Hua University, Department of Engineering and System Science
Journal Papers
Low Equivalent Oxide Thickness and Leakage Current of pGe MOS Device by Removing Low Oxidation State in GeOx with H2 Plasma Treatment
IEEE Electron Device Letters 2020
Dun-Bao Ruan, Kuei-Shu Chang-Liao, Shih-Han Yi, Hsin-I Yeh, and Guan-Ting Liu
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Enhanced zirconia oxide dielectric quality of germanium p-channel metal oxide semiconductor field effect transistor by in-situ low temperature treatment in atomic layer deposition process
Thin Solid Films 2020
Dun-Bao Ruan, Kuei-Shu Chang-Liao, Ji-Syuan Li, Shih-Han Yi
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Magnetotransport studies of Fe vacancy-ordered Fe4+δSe5 nanowires
Proceedings of the National Academy of Sciences of the United States of America 2020
Keng-Yu Yeh, Tung-Sheng Lo, Phillip M. Wu, Kuei-Shu Chang-Liao, Ming-Jye Wang, and Maw-Kuen Wu*
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Low EOT and oxide traps for p-substrate Ge MOS device with hafnium nitride interfacial layer
Vacuum 2020
Dun-Bao Ruan, Kuei-Shu Chang-Liao, Wen-Yen Hsu, Shih-Han Yi, Yao-Jen Lee
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Improved electrical characteristics of Ge nMOSFET with suitable nitrogen content in starting interfacial layer
Vacuum 2020
Dun-Bao Ruan, Kuei-Shu Chang-Liao, Wen-Yen Hsu, Shih-Han Yi
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Operation Characteristics of Gate-All-Around Junctionless Flash Memory Devices with Si3N4/ZrO-Based Stacked Trapping-Layer
IEEE Trans. Electron Device 2020
Hsin-Kai Fang, Kuei-Shu Chang-Liao, Chia-Hsin Cheng, Yu-Chin Lu, Wen-Hsien Huang, Chang-Hong Shen and Jia-Min Shieh
Fe-Vacancy-Ordered Fe4Se5: The Insulating Parent Phase of FeSe Superconductor
Frontiers in Physics 2020
Keng-Yu Yeh, Yan-Ruei Chen, Tung-Sheng Lo, Phillip M. Wu, Ming-Jye Wang, Kuei-Shu Chang-Liao and Maw-Kuen Wu
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Impacts of Electrical Field in Tunneling Layer on Operation Characteristics of Poly-Ge Charge-Trapping Flash Memory Device
IEEE Electron Device Letters 2020
Hsin-Kai Fang, Kuei-Shu Chang-Liao, Kuan-Chi Chou, Tzu-Cheng Chao, Jung-En Tsai, Yan-Lin Li, Wen-Hsien Huang
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Voltage Stress Induced Interface States and Hole Trapping in Germanium pMOSFETs with High-k Gate Dielectric and Metal-Gate Electrode
Materials Science in Semiconductor Processing 2020
Fu-Chien Chiu, Wei-Chia Chen, Jih-Huah Wu and Kuei-Shu Chang-Liao
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Electrical and Reliability Characteristics of FinFETs with High-k Gate Stack and Plasma Treatments
IEEE Trans. Electron Device 2020
Yan-Lin Li, Kuei-Shu Chang-Liao, Chen-Chien Li, Chin-Hsiu Huang, Shang-Fu Tsai, Cheng-Yuan Li, Zi-Qin Hong, and Hsin-Kai Fang
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Conference Papers
High-k Dielectric and Interface Engineering for High Performance Si/Ge MOS and FinFETs
IEEE EDS Delhi Chapter, Distinguished Lecturer 2019
Kuei-Shu Chang-Liao
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Improved Electrical Characterisics of pGe MOS Device by Hydrogen Plasma Treated GeO Interfacial Layer
2020 Silicon Nanoelectronics Workshop
Dun-Bao Ruan, Kuei-Shu Chang-Liao, Shih-Han Yi, Hsin-I Yeh, and Guan-Ting Liu
Process development of CMOS TFTs for monolithic 3D-IC applications
238th Meeting of The Electrochemical Society (ECS) 2020
K.S. Chang-Liao, D.B. Ruan, P.C. Chiu
Enhanced Reliability and Uniformity for Ge pMOSFET with Low Temperature Supercritical Fluid Treatment
51th IEEE Semiconductor Interface Specialist Conference (SISC) 2020
Dun-Bao Ruan, Kuei-Shu Chang-Liao, Ji-Syuan Li, Zi-Qin Hong, Guan-Ting Liu, and Po-Tsun Liu
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