Low Equivalent Oxide Thickness and Leakage Current of pGe MOS Device by Removing Low Oxidation State in GeOx with H2 Plasma Treatment

IEEE Electron Device Letters 2020

Dun-Bao Ruan, Kuei-Shu Chang-Liao, Shih-Han Yi, Hsin-I Yeh, and Guan-Ting Liu

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Enhanced zirconia oxide dielectric quality of germanium p-channel metal oxide semiconductor field effect transistor by in-situ low temperature treatment in atomic layer deposition process

Thin Solid Films 2020

Dun-Bao Ruan, Kuei-Shu Chang-Liao, Ji-Syuan Li, Shih-Han Yi

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Magnetotransport studies of Fe vacancy-ordered Fe4+δSe5 nanowires

Proceedings of the National Academy of Sciences of the United States of America 2020

Keng-Yu Yeh, Tung-Sheng Lo, Phillip M. Wu, Kuei-Shu Chang-Liao, Ming-Jye Wang, and Maw-Kuen Wu*

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Low EOT and oxide traps for p-substrate Ge MOS device with hafnium nitride interfacial layer

Vacuum 2020

Dun-Bao Ruan, Kuei-Shu Chang-Liao, Wen-Yen Hsu, Shih-Han Yi, Yao-Jen Lee

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Improved electrical characteristics of Ge nMOSFET with suitable nitrogen content in starting interfacial layer

Vacuum 2020

Dun-Bao Ruan, Kuei-Shu Chang-Liao, Wen-Yen Hsu, Shih-Han Yi

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Operation Characteristics of Gate-All-Around Junctionless Flash Memory Devices with Si3N4/ZrO-Based Stacked Trapping-Layer

IEEE Trans. Electron Device 2020

Hsin-Kai Fang, Kuei-Shu Chang-Liao, Chia-Hsin Cheng, Yu-Chin Lu, Wen-Hsien Huang, Chang-Hong Shen and Jia-Min Shieh

 

Fe-Vacancy-Ordered Fe4Se5: The Insulating Parent Phase of FeSe Superconductor

Frontiers in Physics 2020

Keng-Yu Yeh, Yan-Ruei Chen, Tung-Sheng Lo, Phillip M. Wu, Ming-Jye Wang, Kuei-Shu Chang-Liao and Maw-Kuen Wu

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Impacts of Electrical Field in Tunneling Layer on Operation Characteristics of Poly-Ge Charge-Trapping Flash Memory Device

IEEE Electron Device Letters 2020

Hsin-Kai Fang, Kuei-Shu Chang-Liao, Kuan-Chi Chou, Tzu-Cheng Chao, Jung-En Tsai, Yan-Lin Li, Wen-Hsien Huang

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Voltage Stress Induced Interface States and Hole Trapping in Germanium pMOSFETs with High-k Gate Dielectric and Metal-Gate Electrode

Materials Science in Semiconductor Processing 2020

Fu-Chien Chiu, Wei-Chia Chen, Jih-Huah Wu and Kuei-Shu Chang-Liao

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Electrical and Reliability Characteristics of FinFETs with High-k Gate Stack and Plasma Treatments

IEEE Trans. Electron Device 2020

Yan-Lin Li, Kuei-Shu Chang-Liao, Chen-Chien Li, Chin-Hsiu Huang, Shang-Fu Tsai, Cheng-Yuan Li, Zi-Qin Hong, and Hsin-Kai Fang

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