INTRODUCTION

 

          Fin field effect transistors (FinFETs) are now widely recognized as a promising solution to pursue the Moore’s law beyond conventional planar bulk and fully depleted silicon-on-insulator (SOI) technologies. During the last years, aggressively scaled FinFETs have already been demonstrated.

          Si/Ge heterostructures are great interests for high performance metal oxide semiconductor field effect transistors (MOSFETs). The compressive strain resulting from the lattice mismatch between Ge and Si plays a dominant role in determining the energy band alignment and the hole effective mass in SiGe heterostructures; it can yield significant hole mobility improvements in 1-D semiconducting FinFET.has recently been regarded as a promising channel material for metal oxide semiconductor field effect transistors (MOSFETs) because it possesses higher carrier mobility as compared to Si (two times for electron and four times for hole) .

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