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Basic Operation Mode for CTF (P/E Operations)

Programming operation

1.Electrons tunnel through SiO2 into charge-trapping layer and are trapped.

2.Electrons transporting in charge-trapping layer tunnel through blocking layer

Erasing operation

1.Holes inject to charge-trapping layer and recombine with trapped electrons.

2.Trapped electrons detrap by tunneling or emission mechanisms.

3.Erase speed can be suppressed by  electron back tunneling.

â—ŽHfO2/SiN stacked trapping layer

â—ŽHfO2/HfAlO stacked trapping layer

â—ŽBandgap-engineered trapping layer is achieved by multi-layer stack.

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